Publications of Matthias Scheffler

Methfessel, M.; Agrawal, B. K.; Scheffler, M.: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), pp. 989 - 992 (1990)

Vigneron, J. P.; Scheffler, M.; Laloyaux, T.; Derycke, I.; Lucas, A. A.: Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 41, pp. 745 - 746 (1990)

Beeler, F.; Scheffler, M.: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 983 - 986 (1989)

Beeler, F.; Scheffler, M.: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, pp. 257 - 262 (1989)

Biernacki, S.; Scheffler, M.: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, pp. 290 - 293 (1989)

Biernacki, S.; Scherz, U.; Gillert, R.; Scheffler, M.: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, pp. 625 - 630 (1989)

Dabrowski, J.; Scheffler, M.: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), pp. 1023 - 1026 (1989)

Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Mat. Sci. Forum 38-41, pp. 51 - 58 (1989)

Dabrowski, J.; Scheffler, M.: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, pp. 10391 - 10401 (1989)

Overhof, H.; Scheffler, M.; Weinert, C. M.: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, pp. 293 - 298 (1989)

Overhof, H.; Scheffler, M.; Weinert, C. M.: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, pp. 315 - 319 (1989)

Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, pp. 231 - 250 (1989)

Scherz, U.; Weider, D.; Scheffler, M.: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, p. 1 (1989)

Weider, D.; Scheffler, M.; Scherz, U.: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, pp. 299 - 304 (1989)

Dabrowski, J.; Scheffler, M.: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials, pp. 37 - 42 (1988)

Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals, pp. 425 - 430 (1988)

Dabrowski, J.; Scheffler, M.: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters 60, pp. 2183 - 2186 (1988)

Máca, F.; Scheffler, M.: Calculation of electronic structure for a crystal surface or interface. Proc. 4th Symposium on Surface Physics, pp. 221 - 224 (1988)

Máca, F.; Scheffler, M.: Surface Green's function for a rumpled crystal surface. Comput. Phys. Commun. 51, pp. 381 - 390 (1988)

Said, M.; Máca, F.; Kambe, K.; Scheffler, M.; Christensen, N. E.: Electronic structure of fcc and bcc close-packed silver surfaces. Physical Review B 38, pp. 8505 - 8507 (1988)