Publikationen von Matthias Scheffler

Baldauf, C.; Ropo, M.; Blum, V.; Scheffler, M.: How mono-valent cations bend peptide turns and a first-principles database of amino acids and dipeptides. In: Proceedings of the International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014), S. 119 - 120 (Hg. Simos, T. E.; Kalogiratou, Z.; Monovasilis, T.). International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014), Athens, Greece, 04. April 2014 - 07. April 2014. AIP Publishing, Melville, NY (2014)

Mulakaluri, N.; Pentcheva, R.; Moritz, W.; Weiland, M.; Scheffler, M.: Theoretical evidence of a mixed adsorption mode of water on Fe₃O₄(001). 19th Annual VM Goldschmidt Conference, Davos, Switzerland, 21. Juni 2009. Geochimica et Cosmochimica Acta 73 (13), S. A913 - A913 (2009)

Buecking, N.; Butscher, S.; Richter, M.; Weber, C.; Declair, S.; Woerner, M.; Reimann, K.; Kratzer, P.; Scheffler, M.; Knorr, A.: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE, Bd. 6892, 689209. (2008)

Santoprete, R.; Koiller, B.; Capaz, R. B.; Kratzer, P.; Scheffler, M.: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 745 - 746 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Wu, H.; Kratzer, P.; Scheffler, M.: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 311 - 312 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Carlsson, J. M.; Scheffler, M.: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures, S. 432 - 435 (Hg. Kuzmany, H.; Fink, J.; Mehring, M.; Roth, S.). XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 12. März 2005 - 19. März 2005. American Institute of Physics, Melville, New York (2005)

Pentcheva, R.; Wagner, F.; Moritz, W.; Scheffler, M.: Structure, energetics and properties of Fe₃O₄(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004, S. 375 - 381 (Hg. Wagner, S.; Hanke, W.; Bode, A.; Durst, F.). Transactions of the Secont Jont HLRB and KONWIHR Status Result Workshop, München, 02. März 2004 - 03. März 2004. Springer, Berlin (2005)

Ratsch, C.; Fielicke, A.; Behler, J.; Scheffler, M.; Helden, G. v.; Meijer, G.: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, S. 1 - 4. NSTI Nanotechnology Conference and Trade Show, Anaheim, CA, USA, 08. Mai 2005 - 12. Mai 2005. (2005)

Scheffler, M.; Kratzer, P.; Wang, L. G.: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics, S. 3 - 7. 4th Symposium on Atomic-scale Surface and Interface Dynamics, Tsukuba, Japan, 02. März 2000 - 03. März 2000. (2000)

Grosse, F.; Kley, A.; Scheffler, M.; Zimmermann, R.: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors (Hg. Gershoni, D.). Internatinal Conference on the Physics of Semiconductors, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Grosse, F.; Neugebauer, J.; Scheffler, M.: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999 (Hg. David, G.). International Conference on the Physics of Semiconductors 1999, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, S. 235 - 242 (Hg. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Groß, A.; Scheffler, M.: Steering and Isotope Effects in the Dissociative Adsorption of H₂/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996, S. 285 - 292 (Hg. Kumar, V.; Sengupta, S.; Raj, B.). Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20. August 1996 - 23. August 1996. Springer, Berlin (1997)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science, S. 23 - 32 (Hg. Fiorentini, V.; Meloni, F.). VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Petersen, M.; Ruggerone, P.; Scheffler, M.: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 43 - 52 (Hg. Fiorentini, V.). Italian Swiss Workshop Advances in Computational Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 33 - 42 (Hg. Fiorentini, V.). Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, S. 1301 - 1304 (Hg. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, S. 113 - 126 (Hg. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, 17. Oktober 1994 - 20. Oktober 1994. World Scientific, Singapore (1995)