Publikationen von M. Scheffler

Beeler, F.; Andersen, O. K.; Scheffler, M.: Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors, S. 129 (1985)

Beeler, F.; Andersen, O. K.; Scheffler, M.: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 55, S. 1498 - 1501 (1985)

Beeler, F.; Scheffler, M.; Jepsen, O.; Gunnarsson, O.: Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 46, S. 117 (1985)

Beeler, F.; Scheffler, M.; Jepsen, O.; Gunnarsson, O.: Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 54, S. 2525 - 2528 (1985)

Máca, F.; Scheffler, M.: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, S. 403 - 413 (1985)

Meyer, B. K.; Spaeth, J.-M.; Scheffler, M.: As_Ga-induced dichroism in GaAs. Physical Review Letters 54, S. 1333 - 1333 (1985)

Scheffler, M.; Beeler, F.; Jepsen, O.; Gunnarsson, O.; Andersen, O. K.; Bachelet, G. B.: Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, S. 45 - 58 (1985)

Scheffler, M.; Vigneron, J. P.; Bachelet, G. B.: Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, S. 6541 - 6551 (1985)

Hora, R.; Scheffler, M.: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, S. 692 - 702 (1984)

Meyer, B. K.; Spaeth, J.-M.; Scheffler, M.: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, S. 851 - 854 (1984)

Scheffler, M.; Bernholc, J.; Lipari, N. O.; Pantelides, S. T.: Electronic structure and identification of deep defects in GaP. Physical Review B 29, S. 3269 - 3282 (1984)

Pantelides, S. T.; Ivanov, I.; Scheffler, M.; Vigneron, J. P.: Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, S. 18 - 27 (1983)

Vigneron, J. P.; Scheffler, M.; Pantelides, S. T.: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, S. 137 - 139 (1983)

Bernholc, J.; Lipari, N. O.; Pantelides, S. T.; Scheffler, M.: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), S. 5706 - 5715 (1982)

Scheffler, M.; Vigneron, J. P.; Bachelet, G. B.: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, S. 1765 - 1768 (1982)

Schirmer, O.; Scheffler, M.: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, S. L645 - L650 (1982)

Scheffler, M.; Pantelides, S. T.; Lipari, N. O.; Bernholc, J.: Identification and properties of native defects in GaP. Physical Review Letters 47, S. 413 (1981)

Hora, R.; Scheffler, M.: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci. (1980)

Scheffler, M.; Horn, K.; Bradshaw, A. M.; Kambe, K.: Angular-resolved photoemission from physisorbed xenon. Surface science 80, S. 69 - 77 (1979)

Bradshaw, A. M.; Scheffler, M.: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, S. 447 - 454 (1979)