Publications of Matthias Scheffler

Fiorentini, V.; Methfessel, M.; Scheffler, M.: Surface stress, relaxation and reconstruction in fcc transition metals. Vuoto XXIV, pp. 21 - 24 (1995)

Fiorentini, V.; Oppo, S.; Scheffler, M.: Towards an understanding of surfactant action on the epitaxial growth of metals: the case of Sb on Ag(111). Applied Physics A 60, pp. 399 - 402 (1995)

Furthmüller, J.; Kresse, G.; Hafner, J.; Stumpf, R.; Scheffler, M.: Site-selective adsorption of C atoms on Al(111) surfaces. Physical Review Letters 74 (25), pp. 5084 - 5087 (1995)

Groß, A.; Wilke, S.; Scheffler, M.: Six-dimensional quantum dynamics of adsorption and desorption of H_2 at Pd(100): Steering and steric effects. Physical Review Letters 75, pp. 2718 - 2721 (1995)

Hammer, B.; Scheffler, M.: Local chemical reactivity of a metal alloy surface. Physical Review Letters 74, pp. 3487 - 3490 (1995)

Hanbicki, A. T.; Baddorf, A. P.; Plummer, E. W.; Hammer, B.; Scheffler, M.: The interaction of hydrogen with the (110) surface of NiAl. Surface Science 331-333, pp. 811 - 817 (1995)

Kley, A.; Neugebauer, J.; Scheffler, M.: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors, pp. 775 - 782 (1995)

Kohler, B.; Ruggerone, P.; Wilke, S.; Scheffler, M.: Frustrated H-induced instability of Mo(110). Physical Review Letters 74, pp. 1387 - 1390 (1995)

Methfessel, M.; Hennig, D.; Scheffler, M.: Enhanced screening of core holes at transition-metal surfaces. Surface Review and Letters 2, pp. 197 - 201 (1995)

Moll, N.; Bockstedte, M.; Fuchs, M.; Pehlke, E.; Scheffler, M.: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, pp. 2550 - 2556 (1995)

Oppo, S.; Fiorentini, V.; Scheffler, M.: Size-effect surfactants for metal-on-metal growth: Sb on Ag(111). Vuoto XXIV, pp. 37 - 39 (1995)

Pankratov, O.; Scheffler, M.: Formation of localized excitons and the breaking of chemical bonds at III-V (110) surfaces. Proc. of the 22nd International Conference on the Physics of Semiconductors, pp. 485 - 488 (1995)

Pankratov, O.; Scheffler, M.: Localized excitons and breaking of chemical bonds at III-V (110) surfaces. Physical Review Letters 75, pp. 701 - 704 (1995)

Pehlke, E.; Scheffler, M.: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors, pp. 549 - 552 (1995)

Pehlke, E.; Scheffler, M.: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, pp. 952 - 955 (1995)

Stampfl, C.; Scheffler, M.: Theory of alkali metal adsorption on close-packed metal surfaces. Surface Review and Letters 2, pp. 317 - 343 (1995)

Wenzien, B.; Bormet, J.; Scheffler, M.: Green function for crystal surfaces I. Comput. Phys. Commun. 88, pp. 230 - 248 (1995)

Wilke, S.; Scheffler, M.: Poisoning of Pd(100) for the dissociation of H_2: a theoretical study of co-adsorption of hydrogen and sulphur. Surface Science 329, pp. L605 - L610 (1995)

Andersen, J. N.; Hennig, D.; Lundgren, E.; Methfessel, M.; Nyholm, R.; Scheffler, M.: Surface core-level shifts of some 4d-metal single-crystal surfaces: Experiments and ab-initio calculations. Physical Review B 50 (23), pp. 17525 - 17533 (1994)

Biernacki, S. W.; Scheffler, M.: The influence of the isotopic composition on the thermal expansion of crystalline Si. Journal of Physics: Condensed Matter 6 (26), pp. 4879 - 4884 (1994)